transistor(npn) features ? high frequency power amplifier application ? power swithing applications m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 180 v v ceo collector - emitter voltage 160 v v ebo emitter - base voltage 5 v i c collector current 50 m a p c collector power dissipation 150 m w r ja thermal resistance from j u nction to a mbient 833 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 1 00 a, i e =0 180 v collector - emitter breakdown voltage v (br) c e o i c = 1 ma, i b =0 160 v emitter - base breakdown voltage v (br)eb o i e = 100 a , i c =0 5 v collector cut - off current i cbo v cb = 130 v, i e =0 0.1 a emitter cut - off current i ebo v eb = 5 v, i c =0 0.1 a h fe (1) v ce = 3 v, i c = 15 ma 90 400 dc current gain h fe (2) v ce = 3 v, i c = 1 ma 70 collector - emitter saturation voltage v ce(sat) i c = 5 0 ma, i b = 5 ma 0.3 v b ase - emitter saturation voltage v b e(sat) i c = 50 ma, i b = 5 ma 1 v transition frequency f t v ce = 10 v,i c = 10 ma 120 mhz collector output capacitance c ob v cb = 10 v, i e =0, f=1mhz 2.3 pf classification of h fe ( 1 ) rank n5 n6 n7 range 90 C 180 135 C 270 200 C 400 marking n5 n6 n7 so t C 23 1. base 2. emitter 3. collector 1 www.htsemi.com semiconductor jinyu 2SC1654
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